Adhesion, resistivity and structural, optical properties of molybdenum on steel sheet coated with barrier layer done by sol-gel for CIGS solar cells
Identifieur interne : 001174 ( Main/Repository ); précédent : 001173; suivant : 001175Adhesion, resistivity and structural, optical properties of molybdenum on steel sheet coated with barrier layer done by sol-gel for CIGS solar cells
Auteurs : RBID : Pascal:13-0161915Descripteurs français
- Pascal (Inist)
- Adhérence, Tribologie, Propriété mécanique, Conductivité électrique, Propriété optique, Acier molybdène, Couche barrière, Procédé sol gel, Cellule solaire, Couche mince, Propriété thermique, Stabilité thermique, Couche multimoléculaire, Multicouche, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Molybdène, Oxyde de silicium, Traitement thermique, Dégradation thermique, Microstructure, Résistivité couche, Revêtement, Substrat Molybdène, Substrat acier, Mo, Substrat acier inoxydable, SiOx, 6860B, 7361, 7866, 8115L.
- Wicri :
- concept : Molybdène.
English descriptors
- KwdEn :
- Adhesion, Barrier layer, Coatings, Copper selenides, Electrical conductivity, Gallium selenides, Heat treatments, Indium selenides, Mechanical properties, Microstructure, Molybdenum, Molybdenum steels, Multilayer, Multilayers, Optical properties, Sheet resistivity, Silicon oxides, Sol-gel process, Solar cells, Thermal degradation, Thermal properties, Thermal stability, Thin films, Tribology.
Abstract
Molybdenum films are investigated on stainless steel substrates coated with polysilazane based sol-gel and SiOx layers for flexible CIGS solar cell applications. Thermal stability of the multilayer has been studied. The thickness of polysilazane films are significantly reduced (17%) after heat treatment suggesting a thermal degradation. Four different microstructures were found for Mo films by varying argon total pressure from 2.6 x 10-1 Pa to 2.6 Pa. It was shown that continuous films, low sheet resistance (0.5 Ω/□) and well facetted grains can be achieved when Mo films are deposited on heated substrates at homologous temperature, T of 0.2.
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Pascal:13-0161915Le document en format XML
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<author><name sortKey="Amouzou, Dodji" uniqKey="Amouzou D">Dodji Amouzou</name>
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<author><name sortKey="Dumont, Jacques" uniqKey="Dumont J">Jacques Dumont</name>
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<author><name sortKey="Fourdrinier, Lionel" uniqKey="Fourdrinier L">Lionel Fourdrinier</name>
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<author><name sortKey="Richir, Jean Baptiste" uniqKey="Richir J">Jean-Baptiste Richir</name>
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<author><name sortKey="Maseri, Fabrizio" uniqKey="Maseri F">Fabrizio Maseri</name>
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<author><name sortKey="Sporken, Robert" uniqKey="Sporken R">Robert Sporken</name>
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<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Adhesion</term>
<term>Barrier layer</term>
<term>Coatings</term>
<term>Copper selenides</term>
<term>Electrical conductivity</term>
<term>Gallium selenides</term>
<term>Heat treatments</term>
<term>Indium selenides</term>
<term>Mechanical properties</term>
<term>Microstructure</term>
<term>Molybdenum</term>
<term>Molybdenum steels</term>
<term>Multilayer</term>
<term>Multilayers</term>
<term>Optical properties</term>
<term>Sheet resistivity</term>
<term>Silicon oxides</term>
<term>Sol-gel process</term>
<term>Solar cells</term>
<term>Thermal degradation</term>
<term>Thermal properties</term>
<term>Thermal stability</term>
<term>Thin films</term>
<term>Tribology</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Adhérence</term>
<term>Tribologie</term>
<term>Propriété mécanique</term>
<term>Conductivité électrique</term>
<term>Propriété optique</term>
<term>Acier molybdène</term>
<term>Couche barrière</term>
<term>Procédé sol gel</term>
<term>Cellule solaire</term>
<term>Couche mince</term>
<term>Propriété thermique</term>
<term>Stabilité thermique</term>
<term>Couche multimoléculaire</term>
<term>Multicouche</term>
<term>Séléniure de cuivre</term>
<term>Séléniure de gallium</term>
<term>Séléniure d'indium</term>
<term>Molybdène</term>
<term>Oxyde de silicium</term>
<term>Traitement thermique</term>
<term>Dégradation thermique</term>
<term>Microstructure</term>
<term>Résistivité couche</term>
<term>Revêtement</term>
<term>Substrat Molybdène</term>
<term>Substrat acier</term>
<term>Mo</term>
<term>Substrat acier inoxydable</term>
<term>SiOx</term>
<term>6860B</term>
<term>7361</term>
<term>7866</term>
<term>8115L</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Molybdène</term>
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<front><div type="abstract" xml:lang="en">Molybdenum films are investigated on stainless steel substrates coated with polysilazane based sol-gel and SiO<sub>x</sub>
layers for flexible CIGS solar cell applications. Thermal stability of the multilayer has been studied. The thickness of polysilazane films are significantly reduced (17%) after heat treatment suggesting a thermal degradation. Four different microstructures were found for Mo films by varying argon total pressure from 2.6 x 10<sup>-1</sup>
Pa to 2.6 Pa. It was shown that continuous films, low sheet resistance (0.5 Ω/□) and well facetted grains can be achieved when Mo films are deposited on heated substrates at homologous temperature, T of 0.2.</div>
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<fA11 i1="02" i2="1"><s1>DUMONT (Jacques)</s1>
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<fA11 i1="06" i2="1"><s1>SPORKEN (Robert)</s1>
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<fA14 i1="01"><s1>Research Centre in Physics of Matter and Radiation (PMR), University of Namur (FUNDP), Rue de Bruxelles 61</s1>
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<fC01 i1="01" l="ENG"><s0>Molybdenum films are investigated on stainless steel substrates coated with polysilazane based sol-gel and SiO<sub>x</sub>
layers for flexible CIGS solar cell applications. Thermal stability of the multilayer has been studied. The thickness of polysilazane films are significantly reduced (17%) after heat treatment suggesting a thermal degradation. Four different microstructures were found for Mo films by varying argon total pressure from 2.6 x 10<sup>-1</sup>
Pa to 2.6 Pa. It was shown that continuous films, low sheet resistance (0.5 Ω/□) and well facetted grains can be achieved when Mo films are deposited on heated substrates at homologous temperature, T of 0.2.</s0>
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<s5>06</s5>
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<s5>07</s5>
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<s5>15</s5>
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<s2>NK</s2>
<s5>16</s5>
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<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Séléniure d'indium</s0>
<s2>NK</s2>
<s5>17</s5>
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<s2>NK</s2>
<s5>17</s5>
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<s2>NC</s2>
<s5>18</s5>
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<s2>NC</s2>
<s5>18</s5>
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<fC03 i1="19" i2="3" l="FRE"><s0>Oxyde de silicium</s0>
<s2>NK</s2>
<s5>19</s5>
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<s2>NK</s2>
<s5>19</s5>
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<s5>29</s5>
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<s5>29</s5>
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<s5>30</s5>
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<s5>30</s5>
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<s5>31</s5>
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<s5>31</s5>
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<s5>32</s5>
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<s5>32</s5>
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<s5>33</s5>
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<s5>33</s5>
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<s4>INC</s4>
<s5>46</s5>
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<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>Mo</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="28" i2="3" l="FRE"><s0>Substrat acier inoxydable</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="29" i2="3" l="FRE"><s0>SiOx</s0>
<s4>INC</s4>
<s5>50</s5>
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<fC03 i1="30" i2="3" l="FRE"><s0>6860B</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="31" i2="3" l="FRE"><s0>7361</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
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<s4>INC</s4>
<s5>73</s5>
</fC03>
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<s4>INC</s4>
<s5>74</s5>
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